MPT035N08S Specs and Replacement
Type Designator: MPT035N08S
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 208.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 68 nS
Cossⓘ - Output Capacitance: 1181 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: TO263
MPT035N08S substitution
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MPT035N08S datasheet
mpt035n08p mpt035n08s.pdf
85V N-Channel Power MOSFET Description MPT035N08,the N-channel Enhanced Power MOSFETs, Is obtained by advanced double trench technology which reduce the conduction loss,improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. General Features V =85V, R ... See More ⇒
Detailed specifications: MPF10N65, MPG08N68P, MPG08N68S, MPG120N06P, MPG120N06S, MPG150N10P, MPG150N10S, MPT035N08P, IRFB3607, FTP06N06N, MD40N50, MD50N50, MDT35P10D, MDT40P10D, MDT80N06D, MP13N50, MP5N50
Keywords - MPT035N08S MOSFET specs
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