MPT035N08S Datasheet and Replacement
Type Designator: MPT035N08S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 208.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 68 nS
Cossⓘ - Output Capacitance: 1181 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: TO263
MPT035N08S substitution
MPT035N08S Datasheet (PDF)
mpt035n08p mpt035n08s.pdf

85V N-Channel Power MOSFETDescriptionMPT035N08,the N-channel Enhanced Power MOSFETs,Is obtained by advanced double trench technology whichreduce the conduction loss,improve switching performanceand enhance the avalanche energy. This is suitable devicefor BMS and high current switching applications.General Features V =85V, R
Datasheet: MPF10N65 , MPG08N68P , MPG08N68S , MPG120N06P , MPG120N06S , MPG150N10P , MPG150N10S , MPT035N08P , AON7506 , , , , , , , , .
History: TPC8053-H
Keywords - MPT035N08S MOSFET datasheet
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History: TPC8053-H



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