MPF4N65 Datasheet and Replacement
Type Designator: MPF4N65
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 53 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
Package: TO220F
MPF4N65 substitution
MPF4N65 Datasheet (PDF)
mpf4n65.pdf
Silicon N-Channel Power MOSFETDescriptionThe MPF4N65 uses advanced trench technology anddesign to provide excellent RDS(ON)with low gate charge.It can be used in a wide variety of applications.General Features V =4AI =650VDS D R =2@V =10V,I =2ADS(on)(typ) GS DSchematic diagram Low Crss:4.5pF@25V Fast switching Improved dv/dt capabilityApplication
tmp4n65az tmpf4n65az.pdf
TMP4N65AZ(G)/TMPF4N65AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 4.0A
tmp4n65 tmpf4n65.pdf
TMP4N65(G)/TMPF4N65(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 650V 4A
tmp4n65z tmpf4n65z.pdf
TMP4N65Z(G)/TMPF4N65Z(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 650V 4A
Datasheet: FTP06N06N , MD40N50 , MD50N50 , MDT35P10D , MDT40P10D , MDT80N06D , MP13N50 , MP5N50 , IRFP450 , MPF7N65 , MPG100N03P , MPG100N06 , MDT100N06 , MPS100N06 , MPG160N04P , MPG30P10P , MPG40P10P .
History: IRF540FI
Keywords - MPF4N65 MOSFET datasheet
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History: IRF540FI
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