MPF4N65 Datasheet. Specs and Replacement
Type Designator: MPF4N65 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 53 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
Package: TO220F
MPF4N65 substitution
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MPF4N65 datasheet
mpf4n65.pdf
Silicon N-Channel Power MOSFET Description The MPF4N65 uses advanced trench technology and design to provide excellent RDS(ON)with low gate charge. It can be used in a wide variety of applications. General Features V =4A I =650V DS D R =2 @V =10V,I =2A DS(on)(typ) GS D Schematic diagram Low Crss 4.5pF@25V Fast switching Improved dv/dt capability Application ... See More ⇒
tmp4n65az tmpf4n65az.pdf
TMP4N65AZ(G)/TMPF4N65AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 4.0A ... See More ⇒
tmp4n65 tmpf4n65.pdf
TMP4N65(G)/TMPF4N65(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 650V 4A ... See More ⇒
tmp4n65z tmpf4n65z.pdf
TMP4N65Z(G)/TMPF4N65Z(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 650V 4A ... See More ⇒
Detailed specifications: FTP06N06N, MD40N50, MD50N50, MDT35P10D, MDT40P10D, MDT80N06D, MP13N50, MP5N50, AO4407, MPF7N65, MPG100N03P, MPG100N06, MDT100N06, MPS100N06, MPG160N04P, MPG30P10P, MPG40P10P
Keywords - MPF4N65 MOSFET specs
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