MPF7N65 Datasheet. Specs and Replacement
Type Designator: MPF7N65 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 63 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 87 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.35 Ohm
Package: TO220F
MPF7N65 substitution
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MPF7N65 datasheet
mpf7n65.pdf
Silicon N-Channel Power MOSFET Description The MPF7N65 uses advanced trench technology and design to provide excellent RDS(ON)with low gate charge. It can be used in a wide variety of applications. General Features V =7A I =650V DS D R =1.1 @V =10V,I =3.5A DS(on)(typ) GS D Schematic diagram Low Crss 10pF@25V Fast switching Improved dv/dt capability Applicati... See More ⇒
tmp7n65az tmpf7n65az.pdf
TMP7N65AZ(G)/TMPF7N65AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 6.5A ... See More ⇒
tmp7n65z tmpf7n65z.pdf
TMP7N65Z(G)/TMPF7N65Z(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 650V 6.5A ... See More ⇒
jmpf7n65bj.pdf
JMPF7N65BJ Description JMP N-channel Enhancement Mode Power MOSFET Features Applications 650V, 7A Load Switch RDS(ON) ... See More ⇒
Detailed specifications: MD40N50, MD50N50, MDT35P10D, MDT40P10D, MDT80N06D, MP13N50, MP5N50, MPF4N65, BS170, MPG100N03P, MPG100N06, MDT100N06, MPS100N06, MPG160N04P, MPG30P10P, MPG40P10P, MPG50N06P
Keywords - MPF7N65 MOSFET specs
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