MPF7N65 Datasheet and Replacement
Type Designator: MPF7N65
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 63 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 87 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.35 Ohm
Package: TO220F
MPF7N65 substitution
MPF7N65 Datasheet (PDF)
mpf7n65.pdf
Silicon N-Channel Power MOSFETDescriptionThe MPF7N65 uses advanced trench technology anddesign to provide excellent RDS(ON)with low gate charge.It can be used in a wide variety of applications.General Features V =7AI =650VDS D R =1.1@V =10V,I =3.5ADS(on)(typ) GS DSchematic diagram Low Crss:10pF@25V Fast switching Improved dv/dt capabilityApplicati
tmp7n65az tmpf7n65az.pdf
TMP7N65AZ(G)/TMPF7N65AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 6.5A
tmp7n65z tmpf7n65z.pdf
TMP7N65Z(G)/TMPF7N65Z(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 650V 6.5A
jmpf7n65bj.pdf
JMPF7N65BJDescriptionJMP N-channel Enhancement Mode Power MOSFETFeaturesApplications 650V, 7A Load SwitchRDS(ON)
Datasheet: MD40N50 , MD50N50 , MDT35P10D , MDT40P10D , MDT80N06D , MP13N50 , MP5N50 , MPF4N65 , CS150N03A8 , MPG100N03P , MPG100N06 , MDT100N06 , MPS100N06 , MPG160N04P , MPG30P10P , MPG40P10P , MPG50N06P .
History: IXTH50P10
Keywords - MPF7N65 MOSFET datasheet
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History: IXTH50P10
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