MDT100N06 Datasheet. Specs and Replacement
Type Designator: MDT100N06 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 143 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 100 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 36 nS
Cossⓘ - Output Capacitance: 345 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
Package: TO252
MDT100N06 substitution
- MOSFET ⓘ Cross-Reference Search
MDT100N06 datasheet
mpg100n06 mdt100n06 mps100n06.pdf
Green Product MPG100N06 60VN-Channel Power MOSFET DESCRIPTION KEYCHARACTERISTICS V =60V,I =100A DS D The MPG100N06 uses advanced trench technology to provide R ... See More ⇒
Detailed specifications: MDT40P10D, MDT80N06D, MP13N50, MP5N50, MPF4N65, MPF7N65, MPG100N03P, MPG100N06, IRF1407, MPS100N06, MPG160N04P, MPG30P10P, MPG40P10P, MPG50N06P, MPG55N06P, MPT028N10S, MPT037N08P
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