MDT100N06 Datasheet and Replacement

   Type Designator: MDT100N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 143 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 345 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: TO252
     - MOSFET ⓘ Cross-Reference Search