MPG160N04P Datasheet. Specs and Replacement

Type Designator: MPG160N04P  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 200 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 160 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 26 nS

Cossⓘ - Output Capacitance: 230 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm

Package: TO220

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MPG160N04P datasheet

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MPG160N04P

Silicon N-Channel Power MOSFET Description The MPG160N04 uses advanced technology and design to provide excellent RDS(ON) . It can be used in a wide variety of applications. General Features VDS=40V, Rdson... See More ⇒

Detailed specifications: MP13N50, MP5N50, MPF4N65, MPF7N65, MPG100N03P, MPG100N06, MDT100N06, MPS100N06, 10N65, MPG30P10P, MPG40P10P, MPG50N06P, MPG55N06P, MPT028N10S, MPT037N08P, MPT037N08S, MPT042N10P

Keywords - MPG160N04P MOSFET specs

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