All MOSFET. MPG160N04P Datasheet

 

MPG160N04P Datasheet and Replacement


   Type Designator: MPG160N04P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 160 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 230 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
   Package: TO220
 

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MPG160N04P Datasheet (PDF)

 ..1. Size:274K  cn minos
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MPG160N04P

Silicon N-Channel Power MOSFETDescriptionThe MPG160N04 uses advanced technology and design to provideexcellent RDS(ON) . It can be used in a wide variety of applications.General Features VDS=40V, Rdson

Datasheet: MP13N50 , MP5N50 , MPF4N65 , MPF7N65 , MPG100N03P , MPG100N06 , MDT100N06 , MPS100N06 , 75N75 , MPG30P10P , MPG40P10P , MPG50N06P , MPG55N06P , MPT028N10S , MPT037N08P , MPT037N08S , MPT042N10P .

History: MEE7296-G

Keywords - MPG160N04P MOSFET datasheet

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