MPG40P10P Datasheet and Replacement
Type Designator: MPG40P10P
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 180 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 190 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
Package: TO220
MPG40P10P substitution
MPG40P10P Datasheet (PDF)
mpg40p10p.pdf
Silicon P-Channel Power MOSFETDescriptionThe MPG40P10P uses advanced technology and design to provideexcellent RDS(ON) . It can be used in a wide variety of applications.General Features VDS= -100V, ID=-40A Low ON ResistanceSchematic diagram Low Reverse transfer capacitances 100% Single Pulse avalanche energy TestApplication Power switching application
mpg40n10p.pdf
100V N-Channel Power MOSFETDESCRIPTIONThe MPG40N10P uses advanced trench technology toprovideexcellent R , low gate charge. It can be used in a wideDS(ON)variety of applications.KEY CHARACTERISTICS V = 100V,I =40ADS DR
Datasheet: MPF4N65 , MPF7N65 , MPG100N03P , MPG100N06 , MDT100N06 , MPS100N06 , MPG160N04P , MPG30P10P , RFP50N06 , MPG50N06P , MPG55N06P , MPT028N10S , MPT037N08P , MPT037N08S , MPT042N10P , MPT042N10S , MPT045N08P .
Keywords - MPG40P10P MOSFET datasheet
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and datasheets
