All MOSFET. MPG40P10P Datasheet

 

MPG40P10P Datasheet and Replacement


   Type Designator: MPG40P10P
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 180 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 190 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
   Package: TO220
 

 MPG40P10P substitution

   - MOSFET ⓘ Cross-Reference Search

 

MPG40P10P Datasheet (PDF)

 ..1. Size:158K  cn minos
 mpg40p10p.pdf pdf_icon

MPG40P10P

Silicon P-Channel Power MOSFETDescriptionThe MPG40P10P uses advanced technology and design to provideexcellent RDS(ON) . It can be used in a wide variety of applications.General Features VDS= -100V, ID=-40A Low ON ResistanceSchematic diagram Low Reverse transfer capacitances 100% Single Pulse avalanche energy TestApplication Power switching application

 9.1. Size:922K  cn minos
 mpg40n10p.pdf pdf_icon

MPG40P10P

100V N-Channel Power MOSFETDESCRIPTIONThe MPG40N10P uses advanced trench technology toprovideexcellent R , low gate charge. It can be used in a wideDS(ON)variety of applications.KEY CHARACTERISTICS V = 100V,I =40ADS DR

Datasheet: MPF4N65 , MPF7N65 , MPG100N03P , MPG100N06 , MDT100N06 , MPS100N06 , MPG160N04P , MPG30P10P , IRF2807 , MPG50N06P , MPG55N06P , MPT028N10S , MPT037N08P , MPT037N08S , MPT042N10P , MPT042N10S , MPT045N08P .

History: IXTH50P10

Keywords - MPG40P10P MOSFET datasheet

 MPG40P10P cross reference
 MPG40P10P equivalent finder
 MPG40P10P lookup
 MPG40P10P substitution
 MPG40P10P replacement

 

 
Back to Top

 


 
.