MPG50N06P Datasheet. Specs and Replacement
Type Designator: MPG50N06P 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 90 nS
Cossⓘ - Output Capacitance: 225 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
Package: TO220
MPG50N06P substitution
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MPG50N06P datasheet
mpg50n06p.pdf
Silicon N-Channel Power MOSFET Description The MPG50N06 uses advanced trench technology and design to provide Excellent R . It can be used in a wide variety of DS(ON) applications. General Features V =60V,I =50A DS D R 14m @V =10V (Typ 11.0 m ) dson GS R 16m @V =4.5V (Typ 12.5m ) dson GS Low ON Resistance Low Reverse transfer capacitances 100% Single P... See More ⇒
Detailed specifications: MPF7N65, MPG100N03P, MPG100N06, MDT100N06, MPS100N06, MPG160N04P, MPG30P10P, MPG40P10P, SI2302, MPG55N06P, MPT028N10S, MPT037N08P, MPT037N08S, MPT042N10P, MPT042N10S, MPT045N08P, MPT045N08S
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