MPT028N10S Datasheet. Specs and Replacement

Type Designator: MPT028N10S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 180 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 1130 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm

Package: TO263

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MPT028N10S datasheet

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 mpt028n10p mpt028n10s.pdf pdf_icon

MPT028N10S

100V N-Channel Power MOSFET Description MPT028N10,the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss,improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. General Features V =100V, R ... See More ⇒

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MPT028N10S

Description MPT023N10-T, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100 V DSS I 326 A D R 1.4 m DS( on).typ FEATURES ... See More ⇒

Detailed specifications: MPG100N06, MDT100N06, MPS100N06, MPG160N04P, MPG30P10P, MPG40P10P, MPG50N06P, MPG55N06P, 18N50, MPT037N08P, MPT037N08S, MPT042N10P, MPT042N10S, MPT045N08P, MPT045N08S, MPT65N08, MPT65N08S

Keywords - MPT028N10S MOSFET specs

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