MPT037N08P Datasheet and Replacement
Type Designator: MPT037N08P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 208.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 68 nS
Cossⓘ - Output Capacitance: 1181 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0037 Ohm
Package: TO220
MPT037N08P substitution
MPT037N08P Datasheet (PDF)
mpt037n08p mpt037n08s.pdf

85V N-Channel Power MOSFEDescriptionMPT037N08,the N-channel Enhanced Power MOSFETs,is obtained by advanced double trench technology whichreduce the conduction loss,improve switching performanceand enhance the avalanche energy. This is suitable devicefor BMS and high current switching applications.General Features V =85V, R
mpt035n08p mpt035n08s.pdf

85V N-Channel Power MOSFETDescriptionMPT035N08,the N-channel Enhanced Power MOSFETs,Is obtained by advanced double trench technology whichreduce the conduction loss,improve switching performanceand enhance the avalanche energy. This is suitable devicefor BMS and high current switching applications.General Features V =85V, R
Datasheet: MDT100N06 , MPS100N06 , MPG160N04P , MPG30P10P , MPG40P10P , MPG50N06P , MPG55N06P , MPT028N10S , IRF530 , MPT037N08S , MPT042N10P , MPT042N10S , MPT045N08P , MPT045N08S , MPT65N08 , MPT65N08S , P80NF70 .
History: IXTH50P10
Keywords - MPT037N08P MOSFET datasheet
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MPT037N08P replacement
History: IXTH50P10



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