MPT65N08S Datasheet. Specs and Replacement

Type Designator: MPT65N08S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 156.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 510 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm

Package: TO263

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MPT65N08S datasheet

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 mpt65n08 mpt65n08s.pdf pdf_icon

MPT65N08S

85V N-Channel Power MOSFET Description MPT65N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for motor drivers and high speed switching applications. General Features V =85V, R ... See More ⇒

Detailed specifications: MPT028N10S, MPT037N08P, MPT037N08S, MPT042N10P, MPT042N10S, MPT045N08P, MPT045N08S, MPT65N08, P60NF06, P80NF70, AO3400S, AO3401S, IRLR024NTR, K3878, MD20N60, MD20N65, MD23N50

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