All MOSFET. MPT65N08S Datasheet

 

MPT65N08S Datasheet and Replacement


   Type Designator: MPT65N08S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 156.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 510 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: TO263
 

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MPT65N08S Datasheet (PDF)

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MPT65N08S

85V N-Channel Power MOSFETDescriptionMPT65N08, the N-channel Enhanced Power MOSFETs,is obtained by advanced double trench technology whichreduce the conduction loss, improve switching performanceand enhance the avalanche energy. This is suitable devicefor motor drivers and high speed switching applications.General Features V =85V, R

Datasheet: MPT028N10S , MPT037N08P , MPT037N08S , MPT042N10P , MPT042N10S , MPT045N08P , MPT045N08S , MPT65N08 , MMIS60R580P , P80NF70 , AO3400S , AO3401S , IRLR024NTR , K3878 , MD20N60 , MD20N65 , MD23N50 .

History: MDP5N65 | MDT08N06D

Keywords - MPT65N08S MOSFET datasheet

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