MD23N50 Datasheet. Specs and Replacement

Type Designator: MD23N50  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 230 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 23 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 75 nS

Cossⓘ - Output Capacitance: 290 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.26 Ohm

Package: TO3P

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MD23N50 datasheet

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MD23N50

Silicon N-Channel Power MOSFET Description MD23N50 the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. General Features 1 V =500V, R ... See More ⇒

Detailed specifications: MPT65N08S, P80NF70, AO3400S, AO3401S, IRLR024NTR, K3878, MD20N60, MD20N65, IRFZ46N, MD33N25, MD40N25, MD9N90, MDP18N20, MDP2N60, MDP5N65, MDP9N20, MDT08N06D

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