All MOSFET. MD23N50 Datasheet

 

MD23N50 Datasheet and Replacement


   Type Designator: MD23N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 230 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 23 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 75 nS
   Cossⓘ - Output Capacitance: 290 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.26 Ohm
   Package: TO3P
 

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MD23N50 Datasheet (PDF)

 ..1. Size:809K  cn minos
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MD23N50

Silicon N-Channel Power MOSFETDescriptionMD23N50 the silicon N-channel Enhanced MOSFETs, is obtainedby advanced MOSFET technology which reduce the conduction loss,improve switching performance and enhance the avalanche energy.The transistor is suitable device for SMPS, high speed switching andgeneral purpose applications.General Features1 V =500V, R

Datasheet: MPT65N08S , P80NF70 , AO3400S , AO3401S , IRLR024NTR , K3878 , MD20N60 , MD20N65 , STP65NF06 , MD33N25 , MD40N25 , MD9N90 , MDP18N20 , MDP2N60 , MDP5N65 , MDP9N20 , MDT08N06D .

History: MD20N60

Keywords - MD23N50 MOSFET datasheet

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