MD33N25 Datasheet. Specs and Replacement

Type Designator: MD33N25  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 198 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 33 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 75 nS

Cossⓘ - Output Capacitance: 465 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm

Package: TO247

MD33N25 substitution

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MD33N25 datasheet

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MD33N25

Description MD33N25, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit V 250 V DS I 33 A D R 0.1 DS(ON).Typ ... See More ⇒

Detailed specifications: P80NF70, AO3400S, AO3401S, IRLR024NTR, K3878, MD20N60, MD20N65, MD23N50, IRF830, MD40N25, MD9N90, MDP18N20, MDP2N60, MDP5N65, MDP9N20, MDT08N06D, MPG180N10P

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs