All MOSFET. MD33N25 Datasheet

 

MD33N25 Datasheet and Replacement


   Type Designator: MD33N25
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 198 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 33 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 75 nS
   Cossⓘ - Output Capacitance: 465 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
   Package: TO247
 

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MD33N25 Datasheet (PDF)

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MD33N25

DescriptionMD33N25, the silicon N-channel EnhancedMOSFETs, is obtained by advanced MOSFETtechnology which reduce the conduction loss,improve switching performance and enhance theavalanche energy. The transistor is suitabledevice for SMPS, high speed switching andgeneral purpose applications.KEY CHARACTERISTICSParameter Value UnitV 250 VDSI 33 ADR 0.1 DS(ON).Typ

Datasheet: P80NF70 , AO3400S , AO3401S , IRLR024NTR , K3878 , MD20N60 , MD20N65 , MD23N50 , IRF1405 , MD40N25 , MD9N90 , MDP18N20 , MDP2N60 , MDP5N65 , MDP9N20 , MDT08N06D , .

History: MDP5N65 | MD20N65 | MDT08N06D | MDP18N20 | IRLR024NTR

Keywords - MD33N25 MOSFET datasheet

 MD33N25 cross reference
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