MD40N25 Datasheet. Specs and Replacement

Type Designator: MD40N25  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 310 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 620 nS

Cossⓘ - Output Capacitance: 360 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm

Package: TO247

MD40N25 substitution

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MD40N25 datasheet

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 md40n25.pdf pdf_icon

MD40N25

Silicon N-Channel Power MOSFET Description MD40N25 the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. General Features V =250V, R ... See More ⇒

 9.1. Size:302K  cn minos
 md40n50.pdf pdf_icon

MD40N25

Silicon N-Channel Power MOSFET Description The MD40N50 uses advanced technology and design to provide excellent RDS(ON) . It can be used in a wide variety of applications. General Features V =500V,I =40A DS D Low ON Resistance Low Reverse transfer capacitances 100% Single Pulse avalanche energy Test Application Power switching application TO-247 Adapter and... See More ⇒

Detailed specifications: AO3400S, AO3401S, IRLR024NTR, K3878, MD20N60, MD20N65, MD23N50, MD33N25, IRLB3034, MD9N90, MDP18N20, MDP2N60, MDP5N65, MDP9N20, MDT08N06D, MPG180N10P, MPG180N10S

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