All MOSFET. MDP2N60 Datasheet

 

MDP2N60 Datasheet and Replacement


   Type Designator: MDP2N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 34 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 45 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.4 Ohm
   Package: TO251
 

 MDP2N60 substitution

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MDP2N60 Datasheet (PDF)

 ..1. Size:769K  cn minos
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MDP2N60

600V N-Channel Power MOSFETFeatures PRODUCT SUMMARY R

 0.1. Size:1080K  magnachip
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MDP2N60

MDP2N60/MDF2N60 N-Channel MOSFET 600V, 2.0A, 4.5General Description Features These N-channel MOSFET are produced using advanced V = 600V DSMagnaChips MOSFET Technology, which provides low on- I = 2.0A @ V = 10V D GSstate resistance, high switching performance and excellent R 4.5 @ V = 10V DS(ON) GSquality. Applications These devices are suitable device for SM

Datasheet: K3878 , MD20N60 , MD20N65 , MD23N50 , MD33N25 , MD40N25 , MD9N90 , MDP18N20 , HY1906P , MDP5N65 , MDP9N20 , MDT08N06D , MPG180N10P , MPG180N10S , MPG200N08P , MPG200N08S , MPG30N06P .

Keywords - MDP2N60 MOSFET datasheet

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