MDP2N60 Datasheet. Specs and Replacement

Type Designator: MDP2N60  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 34 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 45 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.4 Ohm

Package: TO251

MDP2N60 substitution

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MDP2N60 datasheet

 ..1. Size:769K  cn minos
 mdp2n60 mdt2n60 mpf2n60.pdf pdf_icon

MDP2N60

600V N-Channel Power MOSFET Features PRODUCT SUMMARY R ... See More ⇒

 0.1. Size:1080K  magnachip
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MDP2N60

MDP2N60/MDF2N60 N-Channel MOSFET 600V, 2.0A, 4.5 General Description Features These N-channel MOSFET are produced using advanced V = 600V DS MagnaChip s MOSFET Technology, which provides low on- I = 2.0A @ V = 10V D GS state resistance, high switching performance and excellent R 4.5 @ V = 10V DS(ON) GS quality. Applications These devices are suitable device for SM... See More ⇒

Detailed specifications: K3878, MD20N60, MD20N65, MD23N50, MD33N25, MD40N25, MD9N90, MDP18N20, AON7403, MDP5N65, MDP9N20, MDT08N06D, MPG180N10P, MPG180N10S, MPG200N08P, MPG200N08S, MPG30N06P

Keywords - MDP2N60 MOSFET specs

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