MPG180N10S Datasheet. Specs and Replacement

Type Designator: MPG180N10S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 211 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 180 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23 nS

Cossⓘ - Output Capacitance: 770 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm

Package: TO263

MPG180N10S substitution

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MPG180N10S datasheet

 ..1. Size:1033K  cn minos
 mpg180n10p mpg180n10s.pdf pdf_icon

MPG180N10S

100V N-Channel Power MOSFET DESCRIPTION The MPG180N10P uses advanced trench technology to provide excellent R , low gate charge. It can be used in DS(ON) a wide variety of applications. KEY CHARACTERISTICS V = 100V,I = 180A R ... See More ⇒

Detailed specifications: MD40N25, MD9N90, MDP18N20, MDP2N60, MDP5N65, MDP9N20, MDT08N06D, MPG180N10P, AOD4184A, MPG200N08P, MPG200N08S, MPG30N06P, MPG30N10P, MPG40N10P, MPG60N10P, MPG60NF06P, MPG80N06P

Keywords - MPG180N10S MOSFET specs

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