All MOSFET. MPG180N10S Datasheet

 

MPG180N10S Datasheet and Replacement


   Type Designator: MPG180N10S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 211 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 180 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 770 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: TO263
 

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MPG180N10S Datasheet (PDF)

 ..1. Size:1033K  cn minos
 mpg180n10p mpg180n10s.pdf pdf_icon

MPG180N10S

100V N-Channel Power MOSFETDESCRIPTIONThe MPG180N10P uses advanced trench technology toprovide excellent R , low gate charge. It can be used inDS(ON)a wide variety of applications.KEY CHARACTERISTICS V = 100V,I = 180A R

Datasheet: MD40N25 , MD9N90 , MDP18N20 , MDP2N60 , MDP5N65 , MDP9N20 , MDT08N06D , MPG180N10P , AO4468 , MPG200N08P , MPG200N08S , MPG30N06P , MPG30N10P , MPG40N10P , MPG60N10P , MPG60NF06P , MPG80N06P .

History: IPSA70R360P7S | IRFR9120N

Keywords - MPG180N10S MOSFET datasheet

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