All MOSFET. MPG200N08S Datasheet

 

MPG200N08S Datasheet and Replacement


   Type Designator: MPG200N08S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 270 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 200 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 950 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: TO263
 

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MPG200N08S Datasheet (PDF)

 ..1. Size:1097K  cn minos
 mpg200n08p mpg200n08s.pdf pdf_icon

MPG200N08S

80V N-Channel Power MOSFETDESCRIPTIONThe MPG200N08 uses advanced trench technology toprovide excellent RDS(ON), low gate charge. It can be usedin a wide variety of applications.KEY CHARACTERISTICS VDS = 80V,ID = 200A RDS(ON)

Datasheet: MDP18N20 , MDP2N60 , MDP5N65 , MDP9N20 , MDT08N06D , MPG180N10P , MPG180N10S , MPG200N08P , 60N06 , MPG30N06P , MPG30N10P , MPG40N10P , MPG60N10P , MPG60NF06P , MPG80N06P , MPG90N08P , MPG90N08S .

History: MPG30N06P | MPT037N08P

Keywords - MPG200N08S MOSFET datasheet

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