MPG200N08S Datasheet. Specs and Replacement

Type Designator: MPG200N08S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 270 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 200 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 950 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm

Package: TO263

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MPG200N08S datasheet

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 mpg200n08p mpg200n08s.pdf pdf_icon

MPG200N08S

80V N-Channel Power MOSFET DESCRIPTION The MPG200N08 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications. KEY CHARACTERISTICS VDS = 80V,ID = 200A RDS(ON) ... See More ⇒

Detailed specifications: MDP18N20, MDP2N60, MDP5N65, MDP9N20, MDT08N06D, MPG180N10P, MPG180N10S, MPG200N08P, 60N06, MPG30N06P, MPG30N10P, MPG40N10P, MPG60N10P, MPG60NF06P, MPG80N06P, MPG90N08P, MPG90N08S

Keywords - MPG200N08S MOSFET specs

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