All MOSFET. MPG30N10P Datasheet

 

MPG30N10P Datasheet and Replacement


   Type Designator: MPG30N10P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 225 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: TO220
 

 MPG30N10P substitution

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MPG30N10P Datasheet (PDF)

 ..1. Size:951K  cn minos
 mdt30n10d mpg30n10p.pdf pdf_icon

MPG30N10P

100V N-Channel Power MOSFETDESCRIPTIONThe MPG30N10 uses advanced trench technology toprovideexcellent R , low gate charge. It can be used in a wideDS(ON)variety of applications.KEY CHARACTERISTICS V = 100V,I =30ADS DR

 8.1. Size:2198K  cn minos
 mpg30n06p.pdf pdf_icon

MPG30N10P

Green Product MPG30N06 60V N-Channel Power MOSFET KEY CHARACTERISTICS DESCRIPTION V = 60V,I = 30A DS DThe MPG30N60 uses advanced trench technology to provide R

 9.1. Size:205K  cn minos
 mpg30p10p.pdf pdf_icon

MPG30N10P

Silicon P-Channel Power MOSFETDescriptionThe MPG30P10P uses advanced technology and design to provideexcellent RDS(ON) . It can be used in a wide variety of applications.General Features VDS=-100V, ID=-30A Low ON Resistance Low Reverse transfer capacitances 100% Single Pulse avalanche energy TestApplication Power switching application Adapter and charger

Datasheet: MDP5N65 , MDP9N20 , MDT08N06D , MPG180N10P , MPG180N10S , MPG200N08P , MPG200N08S , MPG30N06P , IRF730 , MPG40N10P , MPG60N10P , MPG60NF06P , MPG80N06P , MPG90N08P , MPG90N08S , MPT012N08T , MPT023N10T .

History: MPG30N06P

Keywords - MPG30N10P MOSFET datasheet

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