MPG40N10P Datasheet. Specs and Replacement
Type Designator: MPG40N10P 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 70 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 225 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: TO220
MPG40N10P substitution
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MPG40N10P datasheet
mpg40n10p.pdf
100V N-Channel Power MOSFET DESCRIPTION The MPG40N10P uses advanced trench technology toprovide excellent R , low gate charge. It can be used in a wide DS(ON) variety of applications. KEY CHARACTERISTICS V = 100V,I =40A DS D R ... See More ⇒
mpg40p10p.pdf
Silicon P-Channel Power MOSFET Description The MPG40P10P uses advanced technology and design to provide excellent RDS(ON) . It can be used in a wide variety of applications. General Features VDS= -100V, ID=-40A Low ON Resistance Schematic diagram Low Reverse transfer capacitances 100% Single Pulse avalanche energy Test Application Power switching application ... See More ⇒
Detailed specifications: MDP9N20, MDT08N06D, MPG180N10P, MPG180N10S, MPG200N08P, MPG200N08S, MPG30N06P, MPG30N10P, IRF730, MPG60N10P, MPG60NF06P, MPG80N06P, MPG90N08P, MPG90N08S, MPT012N08T, MPT023N10T, MPT028N10P
Keywords - MPG40N10P MOSFET specs
MPG40N10P cross reference
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MPG40N10P replacement
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