All MOSFET. MPG40N10P Datasheet

 

MPG40N10P Datasheet and Replacement


   Type Designator: MPG40N10P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 225 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: TO220
 

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MPG40N10P Datasheet (PDF)

 ..1. Size:922K  cn minos
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MPG40N10P

100V N-Channel Power MOSFETDESCRIPTIONThe MPG40N10P uses advanced trench technology toprovideexcellent R , low gate charge. It can be used in a wideDS(ON)variety of applications.KEY CHARACTERISTICS V = 100V,I =40ADS DR

 9.1. Size:158K  cn minos
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MPG40N10P

Silicon P-Channel Power MOSFETDescriptionThe MPG40P10P uses advanced technology and design to provideexcellent RDS(ON) . It can be used in a wide variety of applications.General Features VDS= -100V, ID=-40A Low ON ResistanceSchematic diagram Low Reverse transfer capacitances 100% Single Pulse avalanche energy TestApplication Power switching application

Datasheet: MDP9N20 , MDT08N06D , MPG180N10P , MPG180N10S , MPG200N08P , MPG200N08S , MPG30N06P , MPG30N10P , IRF730 , MPG60N10P , MPG60NF06P , MPG80N06P , MPG90N08P , MPG90N08S , MPT012N08T , MPT023N10T , MPT028N10P .

History: MPG60N10P

Keywords - MPG40N10P MOSFET datasheet

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