All MOSFET. MPG80N06P Datasheet

 

MPG80N06P Datasheet and Replacement


   Type Designator: MPG80N06P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 107 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 270 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO220
 

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MPG80N06P Datasheet (PDF)

 ..1. Size:544K  cn minos
 mpg80n06p mdt80n06d.pdf pdf_icon

MPG80N06P

60V N-Channel Power MOSFETDESCRIPTIONThe MPG80N06 uses advanced trench technology to provideexcellent R , low gate charge. It can be used in a wideDS(ON)variety of applications.KEY CHARACTERISTICS V = 60V,I = 80ADS DR

Datasheet: MPG180N10S , MPG200N08P , MPG200N08S , MPG30N06P , MPG30N10P , MPG40N10P , MPG60N10P , MPG60NF06P , IRF740 , MPG90N08P , MPG90N08S , MPT012N08T , MPT023N10T , MPT028N10P , MDT12N10L , MDT13N10D , MDT15N10 .

History: MPG60N10P | MDT100N06

Keywords - MPG80N06P MOSFET datasheet

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