MPG80N06P Datasheet. Specs and Replacement
Type Designator: MPG80N06P 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 107 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 270 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: TO220
MPG80N06P substitution
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MPG80N06P datasheet
mpg80n06p mdt80n06d.pdf
60V N-Channel Power MOSFET DESCRIPTION The MPG80N06 uses advanced trench technology to provide excellent R , low gate charge. It can be used in a wide DS(ON) variety of applications. KEY CHARACTERISTICS V = 60V,I = 80A DS D R ... See More ⇒
Detailed specifications: MPG180N10S, MPG200N08P, MPG200N08S, MPG30N06P, MPG30N10P, MPG40N10P, MPG60N10P, MPG60NF06P, IRF740, MPG90N08P, MPG90N08S, MPT012N08T, MPT023N10T, MPT028N10P, MDT12N10L, MDT13N10D, MDT15N10
Keywords - MPG80N06P MOSFET specs
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