All MOSFET. MDT12N10L Datasheet

 

MDT12N10L Datasheet and Replacement


   Type Designator: MDT12N10L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 31 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
   Package: TO252
 

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MDT12N10L Datasheet (PDF)

 ..1. Size:996K  cn minos
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MDT12N10L

100V N-Channel Power MOSFETDescriptionMDT12N10L, the uses advanced trench technology to provideexcellent R , low gate charge. It can be used in a wide varietyDS(ON)of applicationsKEY CHARACTERISTICSV =100V,ID=12ADSR

Datasheet: MPG60N10P , MPG60NF06P , MPG80N06P , MPG90N08P , MPG90N08S , MPT012N08T , MPT023N10T , MPT028N10P , IRFP460 , MDT13N10D , MDT15N10 , MDT15P04D , MDT18N10D , MDT18N20 , MDT20N06 , MDT20P04D , MDT2N60 .

History: IPD65R660CFDA | MDT2N60 | MDT13N10D

Keywords - MDT12N10L MOSFET datasheet

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