MDT12N10L Datasheet. Specs and Replacement
Type Designator: MDT12N10L 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 31 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 110 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
Package: TO252
MDT12N10L substitution
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MDT12N10L datasheet
mdt12n10l.pdf
100V N-Channel Power MOSFET Description MDT12N10L, the uses advanced trench technology to provide excellent R , low gate charge. It can be used in a wide variety DS(ON) of applications KEY CHARACTERISTICS V =100V,ID=12A DS R ... See More ⇒
Detailed specifications: MPG60N10P, MPG60NF06P, MPG80N06P, MPG90N08P, MPG90N08S, MPT012N08T, MPT023N10T, MPT028N10P, IRFP460, MDT13N10D, MDT15N10, MDT15P04D, MDT18N10D, MDT18N20, MDT20N06, MDT20P04D, MDT2N60
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