MDT12N10L Datasheet and Replacement
Type Designator: MDT12N10L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 31 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 110 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
Package: TO252
MDT12N10L substitution
MDT12N10L Datasheet (PDF)
mdt12n10l.pdf

100V N-Channel Power MOSFETDescriptionMDT12N10L, the uses advanced trench technology to provideexcellent R , low gate charge. It can be used in a wide varietyDS(ON)of applicationsKEY CHARACTERISTICSV =100V,ID=12ADSR
Datasheet: MPG60N10P , MPG60NF06P , MPG80N06P , MPG90N08P , MPG90N08S , MPT012N08T , MPT023N10T , MPT028N10P , IRFP460 , MDT13N10D , MDT15N10 , MDT15P04D , MDT18N10D , MDT18N20 , MDT20N06 , MDT20P04D , MDT2N60 .
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