MDT13N10D Datasheet and Replacement
Type Designator: MDT13N10D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 31 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 13 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 110 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
Package: TO252
MDT13N10D substitution
MDT13N10D Datasheet (PDF)
mdt13n10d.pdf

100V N-Channel Power MOSFETDESCRIPTIONThe MDT13N10D uses advanced trench technology toprovide excellent RDS(ON), low gate charge. It can be usedin a wide variety of applications.ApplicationPower switching applicationHard switched and High frequency circuitsUninterruptible power supplySchematic diagramKEY CHARACTERISTICSVDS = 100V,ID = 13ARDS(ON)
Datasheet: MPG60NF06P , MPG80N06P , MPG90N08P , MPG90N08S , MPT012N08T , MPT023N10T , MPT028N10P , MDT12N10L , IRF640 , MDT15N10 , MDT15P04D , MDT18N10D , MDT18N20 , MDT20N06 , MDT20P04D , MDT2N60 , MDT30N06L .
History: MDT2N60
Keywords - MDT13N10D MOSFET datasheet
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History: MDT2N60



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