All MOSFET. MDT13N10D Datasheet

 

MDT13N10D Datasheet and Replacement


   Type Designator: MDT13N10D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 31 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 13 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
   Package: TO252
 

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MDT13N10D Datasheet (PDF)

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MDT13N10D

100V N-Channel Power MOSFETDESCRIPTIONThe MDT13N10D uses advanced trench technology toprovide excellent RDS(ON), low gate charge. It can be usedin a wide variety of applications.ApplicationPower switching applicationHard switched and High frequency circuitsUninterruptible power supplySchematic diagramKEY CHARACTERISTICSVDS = 100V,ID = 13ARDS(ON)

Datasheet: MPG60NF06P , MPG80N06P , MPG90N08P , MPG90N08S , MPT012N08T , MPT023N10T , MPT028N10P , MDT12N10L , IRF640 , MDT15N10 , MDT15P04D , MDT18N10D , MDT18N20 , MDT20N06 , MDT20P04D , MDT2N60 , MDT30N06L .

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