MDT13N10D Datasheet. Specs and Replacement
Type Designator: MDT13N10D 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 31 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 13 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 110 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
Package: TO252
MDT13N10D substitution
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MDT13N10D datasheet
mdt13n10d.pdf
100V N-Channel Power MOSFET DESCRIPTION The MDT13N10D uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications. Application Power switching application Hard switched and High frequency circuits Uninterruptible power supply Schematic diagram KEY CHARACTERISTICS VDS = 100V,ID = 13A RDS(ON) ... See More ⇒
Detailed specifications: MPG60NF06P, MPG80N06P, MPG90N08P, MPG90N08S, MPT012N08T, MPT023N10T, MPT028N10P, MDT12N10L, IRFZ44, MDT15N10, MDT15P04D, MDT18N10D, MDT18N20, MDT20N06, MDT20P04D, MDT2N60, MDT30N06L
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