All MOSFET. MDT15N10 Datasheet

 

MDT15N10 Datasheet and Replacement


   Type Designator: MDT15N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 31 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: TO252
 

 MDT15N10 substitution

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MDT15N10 Datasheet (PDF)

 ..1. Size:995K  cn minos
 mdt15n10.pdf pdf_icon

MDT15N10

100V N-Channel Power MOSFETDescriptionMDT15N10, the uses advanced trench technology to provideexcellent R , low gate charge. It can be used in a wide varietyDS(ON)of applicationsKEY CHARACTERISTICSV =100V,ID=15ADSR

 9.1. Size:766K  cn minos
 mdt15p04d.pdf pdf_icon

MDT15N10

Silicon P-Channel Power MOSFETDescriptionThe MDT15P04D uses advanced trench technology to provideexcellent R , low gate charge. It can be used in a wide varietyDS(ON)of applications.KEY CHARACTERISTICS V = -40V,I =-15ADS D R

Datasheet: MPG80N06P , MPG90N08P , MPG90N08S , MPT012N08T , MPT023N10T , MPT028N10P , MDT12N10L , MDT13N10D , IRFZ44 , MDT15P04D , MDT18N10D , MDT18N20 , MDT20N06 , MDT20P04D , MDT2N60 , MDT30N06L , MDT30N10 .

History: MDT15P04D | MDT20N06 | AUIRLR3705ZTR | 2SJ486 | MDT18N20

Keywords - MDT15N10 MOSFET datasheet

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