MDT20N06 Datasheet. Specs and Replacement
Type Designator: MDT20N06 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 44 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 6.4 nS
Cossⓘ - Output Capacitance: 76 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: TO252
MDT20N06 substitution
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MDT20N06 datasheet
mdt20n06.pdf
Green Product MDT20N06 60V N-Channel Power MOSFET KEY CHARACTERISTICS DESCRIPTION V = 60V,I = 20A DS D The MDT20N06 uses advanced trench technology to provide R ... See More ⇒
mdt20p04d.pdf
Silicon P-Channel Power MOSFET Description The MDT20P04D uses advanced trench technology to provide excellent R , low gate charge. It can be used in a wide variety DS(ON) of applications. KEY CHARACTERISTICS V = -40V,I =-20A DS D R ... See More ⇒
Detailed specifications: MPT023N10T, MPT028N10P, MDT12N10L, MDT13N10D, MDT15N10, MDT15P04D, MDT18N10D, MDT18N20, IRF640N, MDT20P04D, MDT2N60, MDT30N06L, MDT30N10, MDT30N10D, MDT40N06D, MDT40N10D, MDT50N06D
Keywords - MDT20N06 MOSFET specs
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