MDT20P04D Datasheet. Specs and Replacement
Type Designator: MDT20P04D 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 85 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
Package: TO252
MDT20P04D substitution
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MDT20P04D datasheet
mdt20p04d.pdf
Silicon P-Channel Power MOSFET Description The MDT20P04D uses advanced trench technology to provide excellent R , low gate charge. It can be used in a wide variety DS(ON) of applications. KEY CHARACTERISTICS V = -40V,I =-20A DS D R ... See More ⇒
mdt20n06.pdf
Green Product MDT20N06 60V N-Channel Power MOSFET KEY CHARACTERISTICS DESCRIPTION V = 60V,I = 20A DS D The MDT20N06 uses advanced trench technology to provide R ... See More ⇒
Detailed specifications: MPT028N10P, MDT12N10L, MDT13N10D, MDT15N10, MDT15P04D, MDT18N10D, MDT18N20, MDT20N06, IRFP260N, MDT2N60, MDT30N06L, MDT30N10, MDT30N10D, MDT40N06D, MDT40N10D, MDT50N06D, MPF2N60
Keywords - MDT20P04D MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
