All MOSFET. MDT20P04D Datasheet

 

MDT20P04D Datasheet and Replacement


   Type Designator: MDT20P04D
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 85 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: TO252
 

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MDT20P04D Datasheet (PDF)

 ..1. Size:766K  cn minos
 mdt20p04d.pdf pdf_icon

MDT20P04D

Silicon P-Channel Power MOSFETDescriptionThe MDT20P04D uses advanced trench technology to provideexcellent R , low gate charge. It can be used in a wide varietyDS(ON)of applications.KEY CHARACTERISTICS V = -40V,I =-20ADS D R

 9.1. Size:3343K  cn minos
 mdt20n06.pdf pdf_icon

MDT20P04D

Green Product MDT20N0660V N-Channel Power MOSFET KEY CHARACTERISTICS DESCRIPTION V = 60V,I = 20ADS DThe MDT20N06 uses advanced trench technology to provideR

Datasheet: MPT028N10P , MDT12N10L , MDT13N10D , MDT15N10 , MDT15P04D , MDT18N10D , MDT18N20 , MDT20N06 , 10N60 , MDT2N60 , MDT30N06L , MDT30N10 , MDT30N10D , MDT40N06D , MDT40N10D , MDT50N06D , MPF2N60 .

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