MDT2N60 Datasheet. Specs and Replacement
Type Designator: MDT2N60 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 34 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 45 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.4 Ohm
Package: TO252
MDT2N60 substitution
- MOSFET ⓘ Cross-Reference Search
MDT2N60 datasheet
mdp2n60 mdt2n60 mpf2n60.pdf
600V N-Channel Power MOSFET Features PRODUCT SUMMARY R ... See More ⇒
Detailed specifications: MDT12N10L, MDT13N10D, MDT15N10, MDT15P04D, MDT18N10D, MDT18N20, MDT20N06, MDT20P04D, AO3400, MDT30N06L, MDT30N10, MDT30N10D, MDT40N06D, MDT40N10D, MDT50N06D, MPF2N60, MPF3N150
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
