All MOSFET. MDT2N60 Datasheet

 

MDT2N60 Datasheet and Replacement


   Type Designator: MDT2N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 34 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 45 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.4 Ohm
   Package: TO252
 

 MDT2N60 substitution

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MDT2N60 Datasheet (PDF)

 ..1. Size:769K  cn minos
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MDT2N60

600V N-Channel Power MOSFETFeatures PRODUCT SUMMARY R

Datasheet: MDT12N10L , MDT13N10D , MDT15N10 , MDT15P04D , MDT18N10D , MDT18N20 , MDT20N06 , MDT20P04D , AO3400 , MDT30N06L , MDT30N10 , MDT30N10D , MDT40N06D , MDT40N10D , MDT50N06D , MPF2N60 , MPF3N150 .

History: SIHFP26N60L

Keywords - MDT2N60 MOSFET datasheet

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