MDT40N06D Datasheet. Specs and Replacement

Type Designator: MDT40N06D  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 87 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm

Package: TO252

MDT40N06D substitution

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MDT40N06D datasheet

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MDT40N06D

60V N-Channel Power MOSFE Description The MDT60N06 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications. General Features V =60V, R ... See More ⇒

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MDT40N06D

100V N-Channel Power MOSFET DESCRIPTION The MDT40N10D uses advanced trench technology to provide excellent R , low gate charge. It can be used DS(ON) in a wide variety of applications. KEY CHARACTERISTICS V = 100V,I = 40A R ... See More ⇒

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MDT40N06D

Silicon P-Channel Power MOSFET Description The MDT40P10D uses advanced technology and design to provide excellent RDS(ON) . It can be used in a wide variety of applications. General Features VDS= -100V, ID=-40A Low ON Resistance Low Reverse transfer capacitances Schematic diagram 100% Single Pulse avalanche energy Test Application Power switching application ... See More ⇒

Detailed specifications: MDT18N10D, MDT18N20, MDT20N06, MDT20P04D, MDT2N60, MDT30N06L, MDT30N10, MDT30N10D, AON6414A, MDT40N10D, MDT50N06D, MPF2N60, MPF3N150, MPF40N25, MPF50N25, MPF5N65, MPF8N65

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