All MOSFET. MDT40N06D Datasheet

 

MDT40N06D Datasheet and Replacement


   Type Designator: MDT40N06D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 87 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: TO252
 

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MDT40N06D Datasheet (PDF)

 ..1. Size:1035K  cn minos
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MDT40N06D

60V N-Channel Power MOSFEDescriptionThe MDT60N06 uses advanced trench technologyto provide excellent RDS(ON), low gate charge. It canbe used in a wide variety of applications.General Features V =60V, R

 8.1. Size:928K  cn minos
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MDT40N06D

100V N-Channel Power MOSFETDESCRIPTIONThe MDT40N10D uses advanced trench technology toprovide excellent R , low gate charge. It can be usedDS(ON)in a wide variety of applications.KEY CHARACTERISTICS V = 100V,I = 40A R

 9.1. Size:250K  cn minos
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MDT40N06D

Silicon P-Channel Power MOSFETDescriptionThe MDT40P10D uses advanced technology and design to provideexcellent RDS(ON) . It can be used in a wide variety of applications.General Features VDS= -100V, ID=-40A Low ON Resistance Low Reverse transfer capacitancesSchematic diagram 100% Single Pulse avalanche energy TestApplication Power switching application

Datasheet: MDT18N10D , MDT18N20 , MDT20N06 , MDT20P04D , MDT2N60 , MDT30N06L , MDT30N10 , MDT30N10D , IRFB4110 , MDT40N10D , MDT50N06D , , , , , , .

History: MDT40N10D

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