MDT50N06D Datasheet. Specs and Replacement

Type Designator: MDT50N06D  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 87 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm

Package: TO252

MDT50N06D substitution

- MOSFET ⓘ Cross-Reference Search

 

MDT50N06D datasheet

 ..1. Size:1036K  cn minos
 mdt50n06d.pdf pdf_icon

MDT50N06D

60V N-Channel Power MOSFE Description The MDT50N06 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications. General Features V =60V, R ... See More ⇒

Detailed specifications: MDT20N06, MDT20P04D, MDT2N60, MDT30N06L, MDT30N10, MDT30N10D, MDT40N06D, MDT40N10D, 2N7000, MPF2N60, MPF3N150, MPF40N25, MPF50N25, MPF5N65, MPF8N65, MPF9N20, MPG100N06P

Keywords - MDT50N06D MOSFET specs

 MDT50N06D cross reference

 MDT50N06D equivalent finder

 MDT50N06D pdf lookup

 MDT50N06D substitution

 MDT50N06D replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility