All MOSFET. MDT50N06D Datasheet

 

MDT50N06D Datasheet and Replacement


   Type Designator: MDT50N06D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 87 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: TO252
 

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MDT50N06D Datasheet (PDF)

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MDT50N06D

60V N-Channel Power MOSFEDescriptionThe MDT50N06 uses advanced trench technologyto provide excellent RDS(ON), low gate charge. It canbe used in a wide variety of applications.General Features V =60V, R

Datasheet: MDT20N06 , MDT20P04D , MDT2N60 , MDT30N06L , MDT30N10 , MDT30N10D , MDT40N06D , MDT40N10D , IRF9540 , , , , , , , , .

History: MDT30N10

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