MPF3N150 Datasheet. Specs and Replacement

Type Designator: MPF3N150  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16.7 nS

Cossⓘ - Output Capacitance: 104 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 9 Ohm

Package: TO220F

MPF3N150 substitution

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MPF3N150 datasheet

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MPF3N150

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MPF3N150

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MPF3N150

TMP3N80/TMPF3N80 TMP3N80G/TMPF3N80G VDSS = 880 V @Tjmax Features ID = 3A Low gate charge RDS(ON) = 4.2 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP3N80 / TMPF3N80 TO-220 / TO-220F TMP3N80 / TMPF3N80 RoHS TMP3N80G / TMPF3N... See More ⇒

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Detailed specifications: MDT2N60, MDT30N06L, MDT30N10, MDT30N10D, MDT40N06D, MDT40N10D, MDT50N06D, MPF2N60, 8205A, MPF40N25, MPF50N25, MPF5N65, MPF8N65, MPF9N20, MPG100N06P, MPG100N06S, MPG100N07P

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