All MOSFET. MPF40N25 Datasheet

 

MPF40N25 Datasheet and Replacement


   Type Designator: MPF40N25
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 310 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 620 nS
   Cossⓘ - Output Capacitance: 360 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
   Package: TO220F
 

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MPF40N25 Datasheet (PDF)

 ..1. Size:616K  cn minos
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MPF40N25

DescriptionMPF40N25, the silicon N-channel EnhancedMOSFETs, is obtained by advanced MOSFETtechnology which reduce the conduction loss,improve switching performance and enhance theavalanche energy. The transistor is suitabledevicefor SMPS, high speed switching andgeneralpurpose applications.KEY CHARACTERISTICSParameter Value UnitV 250 VDSI 40 ADR 0.065 DS(ON).Typ

Datasheet: MDT30N06L , MDT30N10 , MDT30N10D , MDT40N06D , MDT40N10D , MDT50N06D , MPF2N60 , MPF3N150 , AON7408 , MPF50N25 , MPF5N65 , MPF8N65 , MPF9N20 , MPG100N06P , MPG100N06S , MPG100N07P , MPG100N07S .

History: IXTH50P10

Keywords - MPF40N25 MOSFET datasheet

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