MPF40N25 Datasheet. Specs and Replacement

Type Designator: MPF40N25  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 310 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 620 nS

Cossⓘ - Output Capacitance: 360 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm

Package: TO220F

MPF40N25 substitution

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MPF40N25 datasheet

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MPF40N25

Description MPF40N25, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitabledevice for SMPS, high speed switching andgeneral purpose applications. KEY CHARACTERISTICS Parameter Value Unit V 250 V DS I 40 A D R 0.065 DS(ON).Typ... See More ⇒

Detailed specifications: MDT30N06L, MDT30N10, MDT30N10D, MDT40N06D, MDT40N10D, MDT50N06D, MPF2N60, MPF3N150, 7N65, MPF50N25, MPF5N65, MPF8N65, MPF9N20, MPG100N06P, MPG100N06S, MPG100N07P, MPG100N07S

Keywords - MPF40N25 MOSFET specs

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