All MOSFET. MPF50N25 Datasheet

 

MPF50N25 Datasheet and Replacement


   Type Designator: MPF50N25
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 310 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 620 nS
   Cossⓘ - Output Capacitance: 360 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: TO220F
 

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MPF50N25 Datasheet (PDF)

 ..1. Size:656K  cn minos
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MPF50N25

DescriptionMPF50N25, the silicon N-channel EnhancedMOSFETs, is obtained by advanced MOSFETtechnology which reduce the conduction loss,improve switching performance and enhance theavalanche energy. The transistor is suitabledevice for SMPS, high speed switching andgeneral purpose applications.KEY CHARACTERISTICSParameter Value UnitV 250 VDSI 50 ADR 0.055 DS(ON).T

Datasheet: MDT30N10 , MDT30N10D , MDT40N06D , MDT40N10D , MDT50N06D , MPF2N60 , MPF3N150 , MPF40N25 , STP75NF75 , MPF5N65 , MPF8N65 , MPF9N20 , MPG100N06P , MPG100N06S , MPG100N07P , MPG100N07S , MPG100N08P .

History: MPG100N03P | MPG100N06 | MPG100N06P

Keywords - MPF50N25 MOSFET datasheet

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