MPF50N25 Datasheet. Specs and Replacement
Type Designator: MPF50N25 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 310 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 620 nS
Cossⓘ - Output Capacitance: 360 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
Package: TO220F
MPF50N25 substitution
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MPF50N25 datasheet
mpf50n25.pdf
Description MPF50N25, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit V 250 V DS I 50 A D R 0.055 DS(ON).T... See More ⇒
Detailed specifications: MDT30N10, MDT30N10D, MDT40N06D, MDT40N10D, MDT50N06D, MPF2N60, MPF3N150, MPF40N25, IRFP250N, MPF5N65, MPF8N65, MPF9N20, MPG100N06P, MPG100N06S, MPG100N07P, MPG100N07S, MPG100N08P
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