All MOSFET. MPF8N65 Datasheet

 

MPF8N65 Datasheet and Replacement


   Type Designator: MPF8N65
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 97 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: TO220F
 

 MPF8N65 substitution

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MPF8N65 Datasheet (PDF)

 ..1. Size:715K  cn minos
 mpf8n65.pdf pdf_icon

MPF8N65

Silicon N-Channel MOSFETFeatures V =650V, I =8ADS D R = 1.4 (Max.) @ V = 10V, I = 4ADS(ON) GS D Fast switching 100% avalanche tested Improved dv/dt capability RoHS and Halogen-Free CompliantApplication Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)TO-220Absolute Maximum Ratings T =25

 8.1. Size:625K  trinnotech
 tmp8n60az tmpf8n60az.pdf pdf_icon

MPF8N65

TMP8N60AZ(G)/TMPF8N60AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 7.5A

 8.2. Size:999K  jiejie micro
 jmpf8n60bj.pdf pdf_icon

MPF8N65

JMPF8N60BJDescriptionJMP N-channel Enhancement Mode Power MOSFETFeaturesApplications 600V, 8A Load SwitchRDS(ON)

 9.1. Size:605K  trinnotech
 tmp8n50z tmpf8n50z.pdf pdf_icon

MPF8N65

TMP8N50Z(G)/TMPF8N50Z(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 8A

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Datasheet: MDT40N06D , MDT40N10D , MDT50N06D , MPF2N60 , MPF3N150 , MPF40N25 , MPF50N25 , MPF5N65 , K3569 , MPF9N20 , MPG100N06P , MPG100N06S , MPG100N07P , MPG100N07S , MPG100N08P , , .

Keywords - MPF8N65 MOSFET datasheet

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