MDT70N03 Datasheet. Specs and Replacement

Type Designator: MDT70N03  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 70 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 280 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: TO252

MDT70N03 substitution

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MDT70N03 datasheet

 ..1. Size:515K  cn minos
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MDT70N03

Silicon N-Channel Power MOSFET Description The MDT70N03 uses advanced trench technology and design to provide excellent R with low gate charge. It can be used DS(ON) in a wide variety of applications. KEY CHARACTERISTICS V =30V,I =70A DS D R ... See More ⇒

Detailed specifications: MPG100N06S, MPG100N07P, MPG100N07S, MPG100N08P, MDT5N65, MDT60N06D, MDT60N10D, MDT60NF06D, 4435, MDT7N65, MDT9N20, MLS60R380D, MLS65R380D, MLS65R580D, MP11P20, MP150N08P, MP180N06P

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