All MOSFET. MDT70N03 Datasheet

 

MDT70N03 Datasheet and Replacement


   Type Designator: MDT70N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 70 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 280 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO252
 

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MDT70N03 Datasheet (PDF)

 ..1. Size:515K  cn minos
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MDT70N03

Silicon N-Channel Power MOSFETDescriptionThe MDT70N03 uses advanced trench technology and designto provide excellent R with low gate charge. It can be usedDS(ON)in a wide variety of applications.KEY CHARACTERISTICS V =30V,I =70ADS DR

Datasheet: MPG100N06S , MPG100N07P , MPG100N07S , MPG100N08P , MDT5N65 , MDT60N06D , MDT60N10D , MDT60NF06D , AON7410 , MDT7N65 , MDT9N20 , MLS60R380D , MLS65R380D , MLS65R580D , MP11P20 , MP150N08P , MP180N06P .

History: QM0004D | CEM4052

Keywords - MDT70N03 MOSFET datasheet

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