All MOSFET. MDT7N65 Datasheet

 

MDT7N65 Datasheet and Replacement


   Type Designator: MDT7N65
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO252
 

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MDT7N65 Datasheet (PDF)

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MDT7N65

Silicon N-Channel Power MOSFETDescriptionMDT7N65, This Power MOSFET is produced using Wisdomsadvanced planar stripe, DMOS technology. This latest technologyhas been especially designed to minimize on-state resistance,have a high rugged avalanche characteristics. These devices arewell suited for high efficiency switch mode power supplies, activepower factor correction, electroni

Datasheet: MPG100N07P , MPG100N07S , MPG100N08P , MDT5N65 , MDT60N06D , MDT60N10D , MDT60NF06D , MDT70N03 , IRF9540N , MDT9N20 , MLS60R380D , MLS65R380D , MLS65R580D , MP11P20 , MP150N08P , MP180N06P , MP18N20 .

History: MLS60R380D

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