MDT7N65 Datasheet. Specs and Replacement

Type Designator: MDT7N65  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 48 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 110 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: TO252

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MDT7N65 datasheet

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MDT7N65

Silicon N-Channel Power MOSFET Description MDT7N65, This Power MOSFET is produced using Wisdom s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electroni... See More ⇒

Detailed specifications: MPG100N07P, MPG100N07S, MPG100N08P, MDT5N65, MDT60N06D, MDT60N10D, MDT60NF06D, MDT70N03, SPP20N60C3, MDT9N20, MLS60R380D, MLS65R380D, MLS65R580D, MP11P20, MP150N08P, MP180N06P, MP18N20

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