MDT9N20 Datasheet. Specs and Replacement

Type Designator: MDT9N20  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.32 Ohm

Package: TO252

MDT9N20 substitution

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MDT9N20 datasheet

 ..1. Size:792K  cn minos
 mp9n20 mdt9n20.pdf pdf_icon

MDT9N20

Silicon N-Channel Power MOSFET Description MP9N20, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. Schematic diagram KEY CHARACTERISTICS V =200V,I =9A R ... See More ⇒

 ..2. Size:646K  cn minos
 mp9n20 mpf9n20 mdp9n20 mdt9n20.pdf pdf_icon

MDT9N20

Description MDT9N20 the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit V 200 V DS I 9 A D R 0.27 DS(ON).Typ ... See More ⇒

Detailed specifications: MPG100N07S, MPG100N08P, MDT5N65, MDT60N06D, MDT60N10D, MDT60NF06D, MDT70N03, MDT7N65, SKD502T, MLS60R380D, MLS65R380D, MLS65R580D, MP11P20, MP150N08P, MP180N06P, MP18N20, MP20N40P

Keywords - MDT9N20 MOSFET specs

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