All MOSFET. MDT9N20 Datasheet

 

MDT9N20 Datasheet and Replacement


   Type Designator: MDT9N20
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.32 Ohm
   Package: TO252
 

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MDT9N20 Datasheet (PDF)

 ..1. Size:792K  cn minos
 mp9n20 mdt9n20.pdf pdf_icon

MDT9N20

Silicon N-Channel Power MOSFETDescriptionMP9N20, the silicon N-channel Enhanced MOSFETs, isobtained by advanced MOSFET technology which reduce theconduction loss, improve switching performance and enhancethe avalanche energy. The transistor is suitable device for SMPS,high speed switching and general purpose applications.Schematic diagramKEY CHARACTERISTICS V =200V,I =9A R

 ..2. Size:646K  cn minos
 mp9n20 mpf9n20 mdp9n20 mdt9n20.pdf pdf_icon

MDT9N20

DescriptionMDT9N20 the silicon N-channel EnhancedMOSFETs, is obtained by advanced MOSFETtechnology which reduce the conduction loss,improve switching performance and enhance theavalanche energy. The transistor is suitabledevice for SMPS, high speed switching andgeneral purpose applications.KEY CHARACTERISTICSParameter Value UnitV 200 VDSI 9 ADR 0.27 DS(ON).Typ

Datasheet: MPG100N07S , MPG100N08P , MDT5N65 , MDT60N06D , MDT60N10D , MDT60NF06D , MDT70N03 , MDT7N65 , SPP20N60C3 , MLS60R380D , MLS65R380D , MLS65R580D , MP11P20 , MP150N08P , MP180N06P , MP18N20 , MP20N40P .

History: CEA6200

Keywords - MDT9N20 MOSFET datasheet

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