All MOSFET. MLS60R380D Datasheet

 

MLS60R380D Datasheet and Replacement


   Type Designator: MLS60R380D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 31 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 560 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
   Package: TO252
 

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MLS60R380D Datasheet (PDF)

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MLS60R380D

DescriptionMLS60R380D, the silicon N-channel Enhanced MOSFETs,is obtained by advanced Super Junction technology whichreduce the conduction loss, improve switching performance.The transistor is suitable device for SMPS,high speedswitching and general purpose applications.KEY CHARACTERISTICS V =600V,I =11A R

Datasheet: MPG100N08P , MDT5N65 , MDT60N06D , MDT60N10D , MDT60NF06D , MDT70N03 , MDT7N65 , MDT9N20 , IRFB3607 , MLS65R380D , MLS65R580D , MP11P20 , MP150N08P , MP180N06P , MP18N20 , MP20N40P , MP3205B .

Keywords - MLS60R380D MOSFET datasheet

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