MLS60R380D Datasheet. Specs and Replacement
Type Designator: MLS60R380D 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 31 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 560 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
Package: TO252
MLS60R380D substitution
- MOSFET ⓘ Cross-Reference Search
MLS60R380D datasheet
mls60r380d.pdf
Description MLS60R380D, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS,high speed switching and general purpose applications. KEY CHARACTERISTICS V =600V,I =11A R ... See More ⇒
Detailed specifications: MPG100N08P, MDT5N65, MDT60N06D, MDT60N10D, MDT60NF06D, MDT70N03, MDT7N65, MDT9N20, K4145, MLS65R380D, MLS65R580D, MP11P20, MP150N08P, MP180N06P, MP18N20, MP20N40P, MP3205B
Keywords - MLS60R380D MOSFET specs
MLS60R380D cross reference
MLS60R380D equivalent finder
MLS60R380D pdf lookup
MLS60R380D substitution
MLS60R380D replacement
Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
