MLS65R580D Datasheet. Specs and Replacement
Type Designator: MLS65R580D 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 26 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 17.9 nS
Cossⓘ - Output Capacitance: 41.7 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.58 Ohm
Package: TO252
MLS65R580D substitution
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MLS65R580D datasheet
mls65r580d.pdf
Description MLS65R580D, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS,high speed switching and general purpose applications. KEY CHARACTERISTICS V =650V,I =8A R ... See More ⇒
mls65r380d.pdf
Description MLS65R380D, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS,high speed switching and general purpose applications. KEY CHARACTERISTICS V =650V,I =11A R ... See More ⇒
Detailed specifications: MDT60N06D, MDT60N10D, MDT60NF06D, MDT70N03, MDT7N65, MDT9N20, MLS60R380D, MLS65R380D, AON7410, MP11P20, MP150N08P, MP180N06P, MP18N20, MP20N40P, MP3205B, MP40N20, MP50N06
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
