All MOSFET. MLS65R580D Datasheet

 

MLS65R580D Datasheet and Replacement


   Type Designator: MLS65R580D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 26 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 17.9 nS
   Cossⓘ - Output Capacitance: 41.7 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.58 Ohm
   Package: TO252
 

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MLS65R580D Datasheet (PDF)

 ..1. Size:538K  cn minos
 mls65r580d.pdf pdf_icon

MLS65R580D

DescriptionMLS65R580D, the silicon N-channel Enhanced MOSFETs,is obtained by advanced Super Junction technology whichreduce the conduction loss, improve switching performance.The transistor is suitable device for SMPS,high speedswitching and general purpose applications.KEY CHARACTERISTICS V =650V,I =8A R

 8.1. Size:718K  cn minos
 mls65r380d.pdf pdf_icon

MLS65R580D

DescriptionMLS65R380D, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS,high speed switching and general purpose applications.KEY CHARACTERISTICS V =650V,I =11A R

Datasheet: MDT60N06D , MDT60N10D , MDT60NF06D , MDT70N03 , MDT7N65 , MDT9N20 , MLS60R380D , MLS65R380D , RFP50N06 , MP11P20 , MP150N08P , MP180N06P , MP18N20 , MP20N40P , , , .

History: MP20N40P

Keywords - MLS65R580D MOSFET datasheet

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