MP11P20 Datasheet and Replacement
Type Designator: MP11P20
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 78 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 74 nS
Cossⓘ - Output Capacitance: 370 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.42 Ohm
Package: TO220
MP11P20 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MP11P20 Datasheet (PDF)
mp11p20.pdf
-200V P-Channel MOSFET Description MP11P20, the silicon P-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. Schematic diagram FEATURES Fast switching 100% avalanc... See More ⇒
Datasheet: MDT60N10D , MDT60NF06D , MDT70N03 , MDT7N65 , MDT9N20 , MLS60R380D , MLS65R380D , MLS65R580D , 12N60 , MP150N08P , MP180N06P , MP18N20 , MP20N40P , MP3205B , MP40N20 , MP50N06 , MP5N65 .
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