MP11P20 Datasheet. Specs and Replacement
Type Designator: MP11P20 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 78 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 74 nS
Cossⓘ - Output Capacitance: 370 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.42 Ohm
Package: TO220
MP11P20 substitution
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MP11P20 datasheet
mp11p20.pdf
-200V P-Channel MOSFET Description MP11P20, the silicon P-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. Schematic diagram FEATURES Fast switching 100% avalanc... See More ⇒
Detailed specifications: MDT60N10D, MDT60NF06D, MDT70N03, MDT7N65, MDT9N20, MLS60R380D, MLS65R380D, MLS65R580D, 12N60, MP150N08P, MP180N06P, MP18N20, MP20N40P, MP3205B, MP40N20, MP50N06, MP5N65
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