MP150N08P Datasheet and Replacement
Type Designator: MP150N08P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 259 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 150 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 570 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
Package: TO220
MP150N08P substitution
MP150N08P Datasheet (PDF)
mp150n08p.pdf

80V N-Channel Power MOSFETDESCRIPTIONThe MP150N08 uses advanced trench technology to provideexcellent RDS(ON), low gate charge. It can be used ina widevariety of applications.KEY CHARACTERISTICSSchematic diagram VDS = 80V,ID = 150ARDS(ON)
Datasheet: MDT60NF06D , MDT70N03 , MDT7N65 , MDT9N20 , MLS60R380D , MLS65R380D , MLS65R580D , MP11P20 , 4435 , MP180N06P , MP18N20 , MP20N40P , , , , , .
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MOSFET: MP20N40P | MP18N20 | MP180N06P | MP150N08P | MP11P20 | MLS65R580D | MLS65R380D | MLS60R380D | MDT9N20 | MDT7N65 | MDT70N03 | MDT60NF06D | MDT60N10D | MDT60N06D | MDT5N65 | MPG100N08P
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