All MOSFET. MP150N08P Datasheet

 

MP150N08P Datasheet and Replacement


   Type Designator: MP150N08P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 259 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 150 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 570 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
   Package: TO220
 

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MP150N08P Datasheet (PDF)

 ..1. Size:591K  cn minos
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MP150N08P

80V N-Channel Power MOSFETDESCRIPTIONThe MP150N08 uses advanced trench technology to provideexcellent RDS(ON), low gate charge. It can be used ina widevariety of applications.KEY CHARACTERISTICSSchematic diagram VDS = 80V,ID = 150ARDS(ON)

Datasheet: MDT60NF06D , MDT70N03 , MDT7N65 , MDT9N20 , MLS60R380D , MLS65R380D , MLS65R580D , MP11P20 , IRF4905 , MP180N06P , MP18N20 , MP20N40P , MP3205B , MP40N20 , MP50N06 , MP5N65 , MP70N10 .

History: MP18N20

Keywords - MP150N08P MOSFET datasheet

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