MP9N20 Datasheet and Replacement
Type Designator: MP9N20
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 90 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.32 Ohm
Package: TO220
MP9N20 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MP9N20 Datasheet (PDF)
mp9n20 mdt9n20.pdf
Silicon N-Channel Power MOSFET Description MP9N20, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. Schematic diagram KEY CHARACTERISTICS V =200V,I =9A R ... See More ⇒
mp9n20 mpf9n20 mdp9n20 mdt9n20.pdf
Description MDT9N20 the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit V 200 V DS I 9 A D R 0.27 DS(ON).Typ ... See More ⇒
Datasheet: MP180N06P , MP18N20 , MP20N40P , MP3205B , MP40N20 , MP50N06 , MP5N65 , MP70N10 , IRFP450 , MPF12N65 , MPF13N50 , MPF18N20 , MPF20N50 , AP15N04S , AP3416AI , AP4N06SI , AP50N03S .
History: MP5N65
Keywords - MP9N20 MOSFET datasheet
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History: MP5N65
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