MPF18N20 Datasheet and Replacement
Type Designator: MPF18N20
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 42 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 52 nS
Cossⓘ - Output Capacitance: 450 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: TO220F
MPF18N20 substitution
MPF18N20 Datasheet (PDF)
mp18n20 mpf18n20 mdp18n20 mdt18n20.pdf
DescriptionMP18N20, the silicon N-channel EnhancedMOSFETs, is obtained by advanced MOSFETtechnology which reduce the conduction loss,improve switching performance and enhance theavalanche energy. The transistor is suitabledevice for SMPS, high speed switching andgeneral purpose applications.KEY CHARACTERISTICSParameter Value UnitV 200 VDSI 18 ADR 0.13 DS(ON).Typ
tmp18n20z tmpf18n20z.pdf
TMP18N20Z(G)/TMPF18N20Z(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on)MAX 100% avalanche tested 200V 18A
jmpf18n50bj.pdf
JMPF18N50BJDescriptionJMP N-channel Enhancement Mode Power MOSFETFeaturesApplications 500V, 18A Load SwitchRDS(ON)
Datasheet: MP3205B , MP40N20 , MP50N06 , MP5N65 , MP70N10 , MP9N20 , MPF12N65 , MPF13N50 , 18N50 , MPF20N50 , , , , , , , .
History: MTP3055VL
Keywords - MPF18N20 MOSFET datasheet
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