MPF18N20 Datasheet and Replacement
Type Designator: MPF18N20
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 42 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 52 nS
Cossⓘ - Output Capacitance: 450 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: TO220F
MPF18N20 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MPF18N20 Datasheet (PDF)
mp18n20 mpf18n20 mdp18n20 mdt18n20.pdf
Description MP18N20, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit V 200 V DS I 18 A D R 0.13 DS(ON).Typ... See More ⇒
tmp18n20z tmpf18n20z.pdf
TMP18N20Z(G)/TMPF18N20Z(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on)MAX 100% avalanche tested 200V 18A ... See More ⇒
jmpf18n50bj.pdf
JMPF18N50BJ Description JMP N-channel Enhancement Mode Power MOSFET Features Applications 500V, 18A Load Switch RDS(ON) ... See More ⇒
Datasheet: MP3205B , MP40N20 , MP50N06 , MP5N65 , MP70N10 , MP9N20 , MPF12N65 , MPF13N50 , BS170 , MPF20N50 , AP15N04S , AP3416AI , AP4N06SI , AP50N03S , AP50N06Y , AP60N02BD , AP130N20MP .
Keywords - MPF18N20 MOSFET datasheet
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