MPF18N20 Datasheet. Specs and Replacement

Type Designator: MPF18N20  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 42 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 52 nS

Cossⓘ - Output Capacitance: 450 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm

Package: TO220F

MPF18N20 substitution

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MPF18N20 datasheet

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MPF18N20

Description MP18N20, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit V 200 V DS I 18 A D R 0.13 DS(ON).Typ... See More ⇒

 0.1. Size:591K  trinnotech
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MPF18N20

TMP18N20Z(G)/TMPF18N20Z(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on)MAX 100% avalanche tested 200V 18A ... See More ⇒

 8.1. Size:1002K  jiejie micro
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MPF18N20

JMPF18N50BJ Description JMP N-channel Enhancement Mode Power MOSFET Features Applications 500V, 18A Load Switch RDS(ON) ... See More ⇒

Detailed specifications: MP3205B, MP40N20, MP50N06, MP5N65, MP70N10, MP9N20, MPF12N65, MPF13N50, BS170, MPF20N50, AP15N04S, AP3416AI, AP4N06SI, AP50N03S, AP50N06Y, AP60N02BD, AP130N20MP

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