MPF20N50 Datasheet. Specs and Replacement

Type Designator: MPF20N50  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 48 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 75 nS

Cossⓘ - Output Capacitance: 290 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm

Package: TO220F

MPF20N50 substitution

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MPF20N50 datasheet

 ..1. Size:795K  cn minos
mpf20n50.pdf pdf_icon

MPF20N50

Silicon N-Channel Power MOSFET Description MPF20N50, the silicon N-channel Enhanced MOSFETS, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for Synchronous Rectification, inverter systems ,high speed switching and general purpose applications. KEY CHARACTERISTIC... See More ⇒

 0.1. Size:409K  trinnotech
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MPF20N50

TMP20N50/TMPF20N50 TMP20N50G/TMPF20N50G VDSS = 550 V @Tjmax Features ID = 18A Low gate charge RDS(on) = 0.3 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP20N50 / TMPF20N50 TO-220 / TO-220F TMP20N50 / TMPF20N50 RoHS TMP20N50... See More ⇒

 0.2. Size:621K  trinnotech
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MPF20N50

TMP20N50A(G)/TMPF20N50A(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 18A ... See More ⇒

 8.1. Size:1002K  jiejie micro
jmpf20n60bj.pdf pdf_icon

MPF20N50

JMPF20N60BJ Description JMP N-channel Enhancement Mode Power MOSFET Features Applications 600V, 20A Load Switch RDS(ON) ... See More ⇒

Detailed specifications: MP40N20, MP50N06, MP5N65, MP70N10, MP9N20, MPF12N65, MPF13N50, MPF18N20, 4N60, AP15N04S, AP3416AI, AP4N06SI, AP50N03S, AP50N06Y, AP60N02BD, AP130N20MP, AP3404MI

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