MPF20N50 Datasheet and Replacement
Type Designator: MPF20N50
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 48 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 75 nS
Cossⓘ - Output Capacitance: 290 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm
Package: TO220F
MPF20N50 substitution
MPF20N50 Datasheet (PDF)
mpf20n50.pdf

Silicon N-Channel Power MOSFETDescriptionMPF20N50, the silicon N-channel Enhanced MOSFETS, isobtained by advanced MOSFET technology which reduce theconduction loss, improve switching performance and enhancethe avalanche energy. The transistor is suitable device forSynchronous Rectification, inverter systems ,high speedswitching and general purpose applications.KEY CHARACTERISTIC
tmp20n50 tmpf20n50.pdf

TMP20N50/TMPF20N50 TMP20N50G/TMPF20N50G VDSS = 550 V @Tjmax Features ID = 18A Low gate charge RDS(on) = 0.3 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP20N50 / TMPF20N50 TO-220 / TO-220F TMP20N50 / TMPF20N50 RoHS TMP20N50
tmp20n50a tmpf20n50a.pdf

TMP20N50A(G)/TMPF20N50A(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 18A
jmpf20n60bj.pdf

JMPF20N60BJDescriptionJMP N-channel Enhancement Mode Power MOSFETFeaturesApplications 600V, 20A Load SwitchRDS(ON)
Datasheet: MP40N20 , MP50N06 , MP5N65 , MP70N10 , MP9N20 , MPF12N65 , MPF13N50 , MPF18N20 , 10N65 , , , , , , , , .
Keywords - MPF20N50 MOSFET datasheet
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