MPF20N50 - Даташиты. Аналоги. Основные параметры

Silicon N-Channel Power MOSFET Description MPF20N50, the silicon N-channel Enhanced MOSFETS, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for Synchronous Rectification, inverter systems ,high speed switching and general purpose applications. KEY CHARACTERISTIC

TMP20N50/TMPF20N50 TMP20N50G/TMPF20N50G VDSS = 550 V @Tjmax Features ID = 18A Low gate charge RDS(on) = 0.3 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP20N50 / TMPF20N50 TO-220 / TO-220F TMP20N50 / TMPF20N50 RoHS TMP20N50

TMP20N50A(G)/TMPF20N50A(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 18A

JMPF20N60BJ Description JMP N-channel Enhancement Mode Power MOSFET Features Applications 600V, 20A Load Switch RDS(ON)

JMPF20N65BJ Description JMP N-channel Enhancement Mode Power MOSFET Features Applications 650V, 20A Load Switch RDS(ON)