All MOSFET. AP8P10S Datasheet

 

AP8P10S Datasheet and Replacement


   Type Designator: AP8P10S
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 119 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
   Package: SOP8
 

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AP8P10S Datasheet (PDF)

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AP8P10S

AP8P10S -100V P-Channel Enhancement Mode MOSFET Description The AP8P10S uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -100V I =-8A DS DR

Datasheet: AP130N20MP , AP3404MI , AP50N06DF , AP6G04S , AP70N03DF , AP80N08D , AP80N08NF , AP80P01NF , 7N60 , AP90N06D , APG12N10D , , , , , , .

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