AP8P10S Datasheet. Specs and Replacement
Type Designator: AP8P10S 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 119 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
Package: SOP8
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AP8P10S datasheet
ap8p10s.pdf
AP8P10S -100V P-Channel Enhancement Mode MOSFET Description The AP8P10S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -100V I =-8A DS D R ... See More ⇒
Detailed specifications: AP130N20MP, AP3404MI, AP50N06DF, AP6G04S, AP70N03DF, AP80N08D, AP80N08NF, AP80P01NF, 2N60, AP90N06D, APG12N10D, AP10G04DF, AP10H03DF, AP10H03S, AP15P04S, AP3400MI, AP34N20P
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