AP90N06D Specs and Replacement
Type Designator: AP90N06D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 108 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 90 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 286 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
Package: TO252
AP90N06D substitution
AP90N06D Specs
ap90n06d.pdf
AP90N06D 60V N-Channel Enhancement Mode MOSFET Description The AP90N06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =90A DS D R ... See More ⇒
ap90n06p ap90n06t.pdf
AP90N06PIT 60V N-Channel Enhancement Mode MOSFET Description The AP90N06P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =90A DS D R ... See More ⇒
ap90n06f.pdf
AP90N06F 60V N-Channel Enhancement Mode MOSFET Description The AP90N06F uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =90A DS D R ... See More ⇒
Detailed specifications: AP3404MI , AP50N06DF , AP6G04S , AP70N03DF , AP80N08D , AP80N08NF , AP80P01NF , AP8P10S , 8N60 , APG12N10D , AP10G04DF , AP10H03DF , AP10H03S , AP15P04S , AP3400MI , AP34N20P , AP50P02DF .
History: HAT1043M
Keywords - AP90N06D MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
