AP90N06D Datasheet and Replacement
Type Designator: AP90N06D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 108 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 90 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 286 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
Package: TO252
AP90N06D substitution
AP90N06D Datasheet (PDF)
ap90n06d.pdf
AP90N06D 60V N-Channel Enhancement Mode MOSFET Description The AP90N06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =90A DS DR
Datasheet: AP3404MI , AP50N06DF , AP6G04S , AP70N03DF , AP80N08D , AP80N08NF , AP80P01NF , AP8P10S , IRFB31N20D , APG12N10D , , , , , , , .
History: AP80P01NF
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History: AP80P01NF
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MOSFET: APG12N10D | AP90N06D | AP8P10S | AP80P01NF | AP80N08NF | AP80N08D | AP70N03DF | AP6G04S | AP50N06DF | AP3404MI | AP130N20MP | AP60N02BD | AP50N06Y | AP50N03S | AP4N06SI | AP3416AI
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