AP15P04S Spec and Replacement
Type Designator: AP15P04S
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id| ⓘ - Maximum Drain Current: 15.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 27.9 nC
tr ⓘ - Rise Time: 35.2 nS
Cossⓘ - Output Capacitance: 323 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
Package: SOP8
AP15P04S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP15P04S Specs
ap15p04s.pdf
AP15P04S -40V P-Channel Enhancement Mode MOSFET Description The AP15P04S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-15.8A DS D R ... See More ⇒
ap15p04d.pdf
AP15P04D -40V P-Channel Enhancement Mode MOSFET Description The AP15P04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-15A DS D R ... See More ⇒
Detailed specifications: AP80N08NF , AP80P01NF , AP8P10S , AP90N06D , APG12N10D , AP10G04DF , AP10H03DF , AP10H03S , STP65NF06 , AP3400MI , AP34N20P , AP50P02DF , AP70H06NF , AP80N06D , AP85N03NF , AP8G04S , AP10N04S .
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