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AP34N20P Spec and Replacement


   Type Designator: AP34N20P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 158 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 34 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 251 nS
   Cossⓘ - Output Capacitance: 362 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
   Package: TO220

 AP34N20P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP34N20P Specs

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AP34N20P

AP34N20P 200V N-Channel Enhancement Mode MOSFET Description The AP34N20P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. Gen... See More ⇒

Detailed specifications: AP8P10S , AP90N06D , APG12N10D , AP10G04DF , AP10H03DF , AP10H03S , AP15P04S , AP3400MI , 7N60 , AP50P02DF , AP70H06NF , AP80N06D , AP85N03NF , AP8G04S , AP10N04S , AP15G04NF , AP220N06MP .

Keywords - AP34N20P MOSFET specs

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