AP34N20P Datasheet. Specs and Replacement
Type Designator: AP34N20P 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 158 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 34 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 251 nS
Cossⓘ - Output Capacitance: 362 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
Package: TO220
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AP34N20P datasheet
ap34n20p.pdf
AP34N20P 200V N-Channel Enhancement Mode MOSFET Description The AP34N20P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. Gen... See More ⇒
Detailed specifications: AP8P10S, AP90N06D, APG12N10D, AP10G04DF, AP10H03DF, AP10H03S, AP15P04S, AP3400MI, 7N60, AP50P02DF, AP70H06NF, AP80N06D, AP85N03NF, AP8G04S, AP10N04S, AP15G04NF, AP220N06MP
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