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AP70H06NF Spec and Replacement


   Type Designator: AP70H06NF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 70 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 199.5 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: PDFN5X6-8L

 AP70H06NF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP70H06NF Specs

 ..1. Size:1821K  cn apm
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AP70H06NF

AP70H06NF 60V N-Channel Enhancement Mode MOSFET Description The AP70H06NF uses advanced APM-SGT technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =70A DS D R ... See More ⇒

Detailed specifications: APG12N10D , AP10G04DF , AP10H03DF , AP10H03S , AP15P04S , AP3400MI , AP34N20P , AP50P02DF , IRFZ46N , AP80N06D , AP85N03NF , AP8G04S , AP10N04S , AP15G04NF , AP220N06MP , AP2301AI , AP2302AI .

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