AP70H06NF Datasheet. Specs and Replacement
Type Designator: AP70H06NF 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 70 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 199.5 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: PDFN5X6-8L
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AP70H06NF substitution
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AP70H06NF datasheet
ap70h06nf.pdf
AP70H06NF 60V N-Channel Enhancement Mode MOSFET Description The AP70H06NF uses advanced APM-SGT technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =70A DS D R ... See More ⇒
Detailed specifications: APG12N10D, AP10G04DF, AP10H03DF, AP10H03S, AP15P04S, AP3400MI, AP34N20P, AP50P02DF, IRFZ46N, AP80N06D, AP85N03NF, AP8G04S, AP10N04S, AP15G04NF, AP220N06MP, AP2301AI, AP2302AI
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