AP80N06D Datasheet. Specs and Replacement

Type Designator: AP80N06D  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 199.5 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm

Package: TO252

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AP80N06D datasheet

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AP80N06D

AP80N06D 60V N-Channel Enhancement Mode MOSFET Description The AP80N06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 7.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =80 A DS D R ... See More ⇒

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Detailed specifications: AP10G04DF, AP10H03DF, AP10H03S, AP15P04S, AP3400MI, AP34N20P, AP50P02DF, AP70H06NF, IRF830, AP85N03NF, AP8G04S, AP10N04S, AP15G04NF, AP220N06MP, AP2301AI, AP2302AI, AP3P06MI

Keywords - AP80N06D MOSFET specs

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