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AP80N06D Spec and Replacement


   Type Designator: AP80N06D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 199.5 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: TO252

 AP80N06D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP80N06D Specs

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AP80N06D

AP80N06D 60V N-Channel Enhancement Mode MOSFET Description The AP80N06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 7.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =80 A DS D R ... See More ⇒

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AP80N06D

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AP80N06D

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AP80N06D

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Detailed specifications: AP10G04DF , AP10H03DF , AP10H03S , AP15P04S , AP3400MI , AP34N20P , AP50P02DF , AP70H06NF , IRF830 , AP85N03NF , AP8G04S , AP10N04S , AP15G04NF , AP220N06MP , AP2301AI , AP2302AI , AP3P06MI .

Keywords - AP80N06D MOSFET specs

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