AP85N03NF Datasheet and Replacement
Type Designator: AP85N03NF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id| ⓘ - Maximum Drain Current: 85 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Qg ⓘ - Total Gate Charge: 70 nC
tr ⓘ - Rise Time: 120 nS
Cossⓘ - Output Capacitance: 386 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: PDFN5X6-8L
AP85N03NF substitution
AP85N03NF Datasheet (PDF)
ap85n03nf.pdf

AP85N03NF 30V N-Channel Enhancement Mode MOSFET Description The AP85N03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =85 A DS DR
Datasheet: AP10H03DF , AP10H03S , AP15P04S , AP3400MI , AP34N20P , AP50P02DF , AP70H06NF , AP80N06D , EMB04N03H , AP8G04S , , , , , , , .
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