All MOSFET. AP4G02LI Datasheet

 

AP4G02LI Datasheet and Replacement


   Type Designator: AP4G02LI
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.5(3.8) A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 42(32.2) nS
   Cossⓘ - Output Capacitance: 49(82) pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035(0.08) Ohm
   Package: SOT23-6
 

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AP4G02LI Datasheet (PDF)

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AP4G02LI

AP4G02LI 20V N+P-Channel Enhancement Mode MOSFET Description The AP4G02LI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =4.5A DS DR

Datasheet: AP8G04S , AP10N04S , AP15G04NF , AP220N06MP , AP2301AI , AP2302AI , AP3P06MI , AP4606B , BS170 , AP8P06S , AP90N08NF , AP10G04S , AP15H06S , AP4957A , AP65N06D , AP65N06DF , AP6G03S .

History: AP10G04DF | AP80P01NF

Keywords - AP4G02LI MOSFET datasheet

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