AP4G02LI Datasheet. Specs and Replacement

Type Designator: AP4G02LI  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.5(3.8) A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 42(32.2) nS

Cossⓘ - Output Capacitance: 49(82) pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035(0.08) Ohm

Package: SOT23-6

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AP4G02LI datasheet

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AP4G02LI

AP4G02LI 20V N+P-Channel Enhancement Mode MOSFET Description The AP4G02LI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =4.5A DS D R ... See More ⇒

Detailed specifications: AP8G04S, AP10N04S, AP15G04NF, AP220N06MP, AP2301AI, AP2302AI, AP3P06MI, AP4606B, AO4407A, AP8P06S, AP90N08NF, AP10G04S, AP15H06S, AP4957A, AP65N06D, AP65N06DF, AP6G03S

Keywords - AP4G02LI MOSFET specs

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